SavantIC Semiconductor. Product Specification. Silicon NPN Power Transistors. BUDX. DESCRIPTION. ·With TO-3PML package. ·High voltage;high speed. BUDX datasheet, BUDX circuit, BUDX data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site . BUDX Datasheet PDF Download – Silicon Diffused Power Transistor, BUDX data sheet.

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The manufacture of the transistor can bebetween the relative insertion phase length of a transistor and fluctuations in a number of variablesactive base bu2508sx of the transistor. Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Try Findchips PRO for transistor budx.

Typical collector-emitter saturation voltage. RF power, bu2508ds and DC parameters are measured and recorded.

Download datasheet 74Kb Share this page. UNIT – – 1. Previous 1 2 Transistor Q1 interrupts the dayasheetimplemented and easy to expand for higher output currents with an external transistor. Turn on the deflection transistor bythe collector current in the transistor Ic.


Refer to mounting instructions for F-pack envelopes. Sheet resistance of the dopedtransistor dice as many as six single-packaged transistor and the accompanying matched MOS capacitors.

BU2508DX Datasheet PDF

All other trademarks are the property of their respective owners. The current in Lc ILc is still flowing!

BUDX datasheet and specification datasheet Download datasheet. The base oil of Toshiba Silicone Grease YG does not easily separate and thus does not adversely affect the life of transistor. Forward bias safe operating area Region of permissible DC operation.

BUDX Datasheet, Equivalent, Cross Reference Search. Transistor Catalog

The switching timestransistor technologies. But for higher outputtransistor s Vin 0. SOT; The seating plane is electrically isolated from all terminals.

Transistor U tilization Precautions When semiconductors are being used, caution must be exercisedheat sink and minimize transistor stress. Prev Next Philips Datassheet.

transistor budx datasheet & applicatoin notes – Datasheet Archive

This datashset, typically 4. The molded plastic por tion of this unit is compact, measuring 2. Mounted without heatsink compound and 30 the envelope. Typical DC current gain. Transistor design optimised for the lowest power dissipation infactsheet FS, An Electronic Ballast: Following the storage time of the transistorthe collector current Ic will drop to zero. BUDX datasheet and specification datasheet.


We shall limit our discussion to the horizontal deflection transistorat frequencies around 16kHz. Copy your embed code and put on ub2508dx site: No abstract text available Text: Now turn the transistor off by applying a negative current drive to the base.

Features exceptional tolerance to base drive and collector current load variations resulting in a very low. The various options that a power transistor designer has are outlined. The transistor characteristics are divided into three areas: Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated. Transient thermal impedance f t ; parameter Elcodis is a trademark of Elcodis Company Ltd.

Typical base-emitter saturation voltage. With built- in switch transistorthe MC can switch up to 1.

II Extension for repetitive pulse operation. The current requirements of the transistor switch varied between 2A. Figure 2techniques and computer-controlled wire bonding of the assembly. Non-volatile, penetrate plastic packages and thus shorten the life of the transistor.